, o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. silicon npn power transistor telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 BDY80 description ? i^urrinuuus ouneciui ^uireni-ic- ia\ collector power dissipation- : pc= 36w @tc= 25 c ? complement to type bdy82 applications ? designed for general purpose switching and amplifier applications. absolute maximum ratings(ta=25c) symbol vcbo vcex vceo vebo ic ib pc tj ts,g parameter collector-base voltage collector-emitter voltage vbe= -15v collector-emitter voltage emitter-base voltage collector current-continuous base current-continuous collector power dissipation@tc=25c junction temperature storage temperature value 40 40 35 10 4 2 36 150 -55-175 unit v v v v a a w ?c c thermal characteristics symbol rth j-c parameter max thermal resistance.junction to case 3.5 unit c/w , ^ . 2 * 3 pin 1.base . , 2. collector 1 i i 3. emitter 1 2 3 to-220c package , ffcf yr a -. b h **-v-h s~ t~jc 3ooov \l ? ml i 1 c t~ j siru h?h ? i dim a b c d f g h j k. l a % s u tf f ~* . j,. mm win 15.70 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 max 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86 ?s v t s nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to he both accurate and reliable at the time of going to press. however. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
silicon npn power transistor BDY80 electrical characteristics tc=25'c unless otherwise specified symbol vceo(sus) v(br)cso v(br)ebo vce(sat) vee(on) iceo icbo iebo hpe-1 hfe-2 fl parameter collector-emitter sustaining voltage collector-base breakdown voltage emitter-base breakdown voltage collector-emitter saturation voltage base-emitter on voltage collector cutoff current collector cutoff current emitter cutoff current dc current gain dc current gain current gain-bandwidth product conditions lc= 100ma; ib= 0 lc= 10ma; ie= 0 !e=10ma; lc=0 lc= 1a; ib= 0.05a lc= 0.5a; vce= 5v vce= 20v; ib= 0 vcb= 20v; ie= 0 veb= 5v; lc= 0 lc= 0.5a; vce= 5v |c= 1a; vce= 5v lc= 0.5a; vce= 10v min 35 40 10 40 20 typ. 1 max 1.0 0.9 10 0.2 0.1 240 unit v v v v v ma ma ma mhz ? hpe-1 classifications a 40-80 b 70-140 c 120-240
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